This feature is not available right now please try again later. Materials science in semiconductor processing supports open access latest issue special issues all issues sign in to set up alerts wide band gap semiconductors technology for next generation of energy efficient power electronics edited by fabrizio roccaforte godignon philippe. The use of wide gap semiconductors leads to less thermal quenching of the electroluminescence however o doped si does lead to state of the art el devices because of the intense current research in sic and iii v nitride semiconductors improvements in the crystal quality and in the processing technology of these materials are likely to occur. Wide bandgap semiconductors also known as wbg semiconductors or wbgss are semiconductor materials which have a relatively large band gap compared to conventional semiconductors conventional semiconductors like silicon have a bandgap in the range of 1 15 electronvolt ev whereas wide bandgap materials have bandgaps in the range of 2 4 ev. Wide bandgap semiconductors made from such materials as gan sic diamond and znse are undergoing a strong resurgence in recent years principally because of their direct bandgaps which give them a huge advantage over the indirect gap sic as an example more than 10 million blue leds using this technology are sold each month and new high brightness 15 lumens per watt long life white
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